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Ordering number : EN8975
SCH2401
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
SCH2401
Features
* * * * *
General-Purpose Switching Device Applications
The SCH2401 incorporates two elements in the same package which are N-channel MOSFETs, thereby enabling high-density mounting. Low ON-resistance. High-speed switching. 2.5V drive. High ESD voltage (TYP 300V) [Built-in one side diode for protection between Gate-to-Source].
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage (*1) Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm20.8mm) 1unit Conditions Ratings 30 10 0.7 2.8 0.65 150 --55 to +150 Unit V V A A W C C
(*1) : Since the diode between Gate-to-Source for gate prevention serves as one side direction, this product should be careful in circuitry.
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=8V, VDS=0V VDS=10V, ID=100A VDS=10V, ID=350mA ID=350mA, VGS=4V ID=200mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Ratings min 30 1 1 0.4 0.48 0.8 0.7 0.8 1.6 30 7 3.5 0.9 1.15 2.4 1.3 typ max Unit V A A V S pF pF pF
Marking : LA
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2906PE TI IM TB-00000177 No.8975-1/4
SCH2401
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=700mA VDS=10V, VGS=10V, ID=700mA VDS=10V, VGS=10V, ID=700mA IS=700mA, VGS=0V Ratings min typ 8 6 10 8 1 0.4 0.2 0.93 1.2 max Unit ns ns ns ns nC nC nC V
Package Dimensions
unit : mm (typ) 7028-006
Switching Time Test Circuit
VIN
VDD=15V
1.6
0.05
4V 0V
0.2
654
0.2
VIN
ID=350mA RL=42
D
1.6 1.5
VOUT
PW=10s D.C.1%
0.05
1
23 0.5
0.56
G
1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : SCH6
SCH2401 P.G 50
S
0.25
0.7
ID -- VDS
V
V
1.4
ID -- VGS
25 C
VDS=10V
3.0
2.5
Drain Current, ID -- A
4.0V
2.0V
Drain Current, ID -- A
0.5
1.0
6.0
V
0.4
0.8
0.3
0.6
0.2
Ta =
0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT08472
0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Drain-to-Source Voltage, VDS -- V
Gate-to-Source Voltage, VGS -- V
--25
25
0.1
0.2
C
75 C C
VGS=1.5V
0.4
Ta= --
0.6
1.2
25 75 C C
IT08473
No.8975-2/4
SCH2401
5.0
RDS(on) -- VGS
Ta=25C
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 --60
RDS(on) -- Ta
Static Drain-to-Source On-State Resistance, RDS(on) --
4.0
3.0
ID=200mA
Static Drain-to-Source On-State Resistance, RDS(on) --
I D=
A, 200m
=2.5V VGS
350mA
2.0
0m I D=35
=4.0V A, V GS
1.0
0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
--40
--20
0
20
40
60
80
100
120
140
Gate-to-Source Voltage, VGS -- V
3
IT08474 3
Ambient Temperature, Ta -- C
IT08475
yfs -- ID
IS -- VSD
VGS=0V
Forward Transfer Admittance, yfs -- S
VDS=10V
2
2 1.0
1.0 7 5 3 2
Source Current, IS -- A
7 5 3 2 0.1 7
Ta=
--2
5C
7
C 5
Ta=75 C 25C
0.4 0.6
C 25
5 3 2
0.1 7 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
0.01 0.2
0.8
--25C
1.0
1.2
1.4 IT08477
Drain Current, ID -- A
100 7
IT08476
60
SW Time -- ID
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
Switching Time, SW Time -- ns
5
50
Ciss, Coss, Crss -- pF
3 2
40
10 7 5 3 2
td(off) td(on) tf tr
30
Ciss
20
10
Coss
Crss
0 5 10 15 20 25 30 IT07517
1.0 0.1
0
2
3
5
7
1.0
2
3
Drain Current, ID -- A
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
IT08478 3
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
RDS(on) -- ID
Static Drain-to-Source On-State Resistance, RDS(on) --
Gate-to-Source Voltage, VGS -- V
VDS=10V ID=0.7A
VGS=4V
2
1.0
7
Ta=75C 25C --25C
5
0.9
1.0
3 0.01
2
3
5
7
0.1
2
3
5
Total Gate Charge, Qg -- nC
IT08479
Drain Current, ID -- A
7 1.0 IT07519
No.8975-3/4
SCH2401
3
RDS(on) -- ID
VGS=2.5V
Static Drain-to-Source On-State Resistance, RDS(on) --
7 5
RDS(on) -- ID
VGS=1.5V
Static Drain-to-Source On-State Resistance, RDS(on) --
2
3
1.0
Ta=75C
2
Ta=75C
--25C
7
25C --25C
1.0
25C
5
7 5 0.01
3 0.01
2
3
5
7
0.1
2
3
5
Drain Current, ID -- A
5 3 2
1.0 IT07520
7
2
3
5
7
0.1
2
3
ASO
Drain Current, ID -- A
0.7
IT07521
PD -- Ta
Allowable Power Dissipation, PD -- W
IDP=2.8A
10s
0.65 0.6
M
Drain Current, ID -- A
1.0 7 5 3 2 0.1 7 5 3 2
1m
ID=0.7A
10 m s
ou
s
nt
ed
0.5
on
ac
DC
10
er
op
0m
era
s
0.4
am
ic
bo
ar
tio
d
n
0.3
(9
00
Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board (900mm20.8mm) 1unit
2 3 5 7 1.0 2 3 5 7 10 2 3 5
m
0.2
m2 0.
8m
m
0.1 0 0 20 40 60 80 100 120
)1
un
it
160
0.01 0.1
140
Drain-to-Source Voltage, VDS -- V
IT08480
Ambient Temperature, Ta -- C
IT08481
Note on usage : Since the SCH2401 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice.
PS No.8975-4/4

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